Data Sheet PG10593EJ01V0DS
7
NE3514S02
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following
recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
: 260?C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220
?C or higher
: 60 seconds or less
Preheating time at 120 to 180
?C
: 120?30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (%
mass)
: 0.2%(Wt.) or below
IR260
Partial Heating
Peak temperature (terminal
temperature)
: 350?C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350
Caution
Do not use different soldering methods together (except for partial heating).
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相关代理商/技术参数
NE3514S02-T1B-A 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR HFET
NE3514S02-T1C 制造商:CEL 制造商全称:CEL 功能描述:K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE3514S02-T1C-A 功能描述:射频GaAs晶体管 SUPER Lo Noise PseudomorpHIc HJ FET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
NE3514S02-T1D 制造商:CEL 制造商全称:CEL 功能描述:K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE3514S02-T1D-A 功能描述:射频GaAs晶体管 SUPER Lo Noise PseudomorpHIc HJ FET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
NE3515S02-A 功能描述:射频GaAs晶体管 X to Ku-BAND SUPER LOW NOISE AMP N-CH RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
NE3515S02-T1C-A 功能描述:射频GaAs晶体管 Super Low Noise Pseudomorphic RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
NE3515S02-T1D-A 功能描述:射频GaAs晶体管 Super Low Noise Pseudomorphic RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: